Poster format: The area available for each poster will be 95 cm wide x 186 cm high .

Room: All poster presentations will take place in Aula Menjador of Casa Convalesencia, on the ground floor.

Each poster session will last 2 hours hours and will coincide, in time and space, with the standing lunch that will be served to all attendees.

Poster sessions

Mach-Zehnder-like interferometry with graphene nanoribbon networks

Sofia Sanz(1) , Nick Papior(2) , Geza Giedke(3,4), Daniel Sanchez-Portal(5), Mads Brandbyge(1) , Thomas Frederiksen(3,4)
(1) Department of Physics, DTU, DK-2800 Kgs. Lyngby, Denmark, (2)DTU Computing Center DK-2800 Kgs. Lyngby, Denmark, (3) Donostia International Physics Center (DIPC), E-20018, Donostia-San Sebastian, Spain, (4) IKERBASQUE, Basque Foundation for Science, E-48013, Bilbao, Spain (5)Centro de Fisica de Materiales CSIC-UPV/EHU, E-20018, Donostia-San Sebastian, Spain

Full-Band Device Simulator with Real-Space Treatment of the Short-Range Coulomb Interactions for Modeling 4H-SiC VDMOS Devices

Dragica Vasileska and Chi-Yin Cheng
School of Electrical, Computer and Energy Engineering Arizona State University, Tempe, AZ 85287-5706

Schottky barriers in one-dimensional field-effect transistors: a model-based characterization

Anibal Pacheco-Sanchez, David Jiménez
Departament d’Enginyeria Electrònica, Escola d’Enginyeria, Universitat Autònoma de Barcelona, Bellaterra 08193, Spain.

Two conductivity regimes in semiconductor δ-layer tunnel junctions

D. Mamaluy and J.P. Mendez
Cognitive & Emerging Computing, Sandia National Laboratories, Albuquerque, USA

Silicon passivation of zigzag graphene edge enabling robust spin-polarized nanogap quantum transport

Juho Lee, Seunghyun Yu and Yong-Hoon Kim
School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Korea

Monte Carlo Simulations of Electrons in Al4SiC4 Ternary Carbide

K. Kalna(1) and D. Chaussende(2)
(1) NanoDeCo Group, Dept. Electronic & Electrical Engineering, Faculty of Science & Engineering, Swansea University, Swansea, SA1 8EN, Wales, United Kingdom (2) Universit´e Grenoble Alpes, CNRS, Grenoble INP, SIMaP, 38000 Grenoble, France

Extending the small-signal modeling of GFETs to ambipolarity regime

Nikolaos Mavredakis, Anibal Pacheco-Sanchez, David Jiménez
N. Mavredakis, A. Pacheco and D. Jiménez are with the Departament d’Enginyeria Electrònica, Escola d’Enginyeria, Universitat Autònoma de Barcelona, Bellaterra 08193, Spain.

Simulation-based Optimization of a Senor-Indenter System for Thin Layer Crack Detection

F. Tremmel(1), O. Nagler(1), C. Kutter(2), and R. Holmer(3)
(1)Infineon Technologies AG, Am Campeon 1-15, 85579 Neubiberg, Germany (2)Polytronic Systems (EMFT) Institute of Physics, UniBw München, Germany (3)Faculty of Electrical Engineering and Information Technology, OTH Regensburg, Germany

Charge Transport Properties of Cytochrome b562 on Gold Interfaces

G.N. Jonnalagadda, Z. Futera
Faculty of Science, University of South Bohemia, Branisovska 1760, 370 05 Ceske Budejovice, Czech Republic

Functionalized TaS2 for thermoelectric applications: an ab-initio investigation

Francesco Siddi, Antonio Cappai, Luciano Colombo and Claudio Melis
Department of Physics, University of Cagliari, Italy

Monte Carlo Solution to Excess Noise and Spatial Blur in Amorphous Selenium Thin-films

Dragica Vasileska(1), Atreyo Mukherjee(2), and Amir H. Goldan(3)
(1)School of Electrical, Computer and Energy Engineering, Arizona State University, AZ, US (2)Department of Electrical Engineering, Stony Brook University, NY, US (3)Department of Radiology, Weill Cornell Medical College, Cornell University, New York, NY, USA

Impurity- and remote-phonon-limited mobility in TMD monolayers

Shoaib Mansoori, Sanjay Gopalan, and Massimo V. Fischetti
Department of Materials Science and Engineering, The University of Texas at Dallas, 800 W. Campbell Rd., Richardson, TX 75080

Coherent and Incoherent Electron Transport through Protein Junctions Investigated by DFT-based Approaches

Z. Futera
Faculty of Science, University of South Bohemia, Branisovska 1760, 370 05 Ceske Budejovice, Czech Republic

Schrödinger Equation Solver Based on Data-Driven Physics-Informed Generic Building Blocks

Martin Veresko, Ming-Cheng Cheng
Department of ECE, Clarkson University, 8 Clarkson Ave, Potsdam NT, United States

Considerations on Treating Polar-Optical Phonon Scattering in Real Space

D. K. Ferry
School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, AZ 25287-6206 USA

Application of Discontinuous Galerkin Methods onto Quantum-Liouville type Equations

V. Ganiu, D. Schulz
Chair for High Frequency Techniques, TU Dortmund, Friedrich-Woehler-Weg 4, 44227 Dortmund, Germany

Self-consistent k.p band structure in doped core-shell nanowires with type-I, type-II and broken-gap radial heterointerfaces.

A. Vezzosi(1), A. Bertoni(2), and G. Goldoni(1, 2)
(1) Università di Modena e Reggio Emilia, via Campi, 213/A, Modena, Italy (2) Istituto Nanoscienze - CNR, Modena, Italy

Ab initio heat dynamics in phonon-based dark matter detectors

M. Raya-Moreno(1), B. J. Kavanagh(2), E. Vilanova(1), L. Fàbrega(1) and R. Rurali(1)
(1)Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, 08193 Bellaterra, Spain (2) Instituto de Física de Cantabria (IFCA, UC-CSIC), Av. de los Castros, 39005 Santander, Spain

Ab initio effective dragged thermoelectric properties in Si nanowires

M. Raya-Moreno(1), R. Rurali(1) and X. Cartoixà(2)
(1) Institut de Ciència de Materials de Barcelona (ICMABCSIC), Campus UAB, 08193 Bellaterra, Spain (2) Departament dEnginyeria Electrònica, Universitat Autònoma de Barcelona, 08193 Bellaterra, Spain

A Sunlight Cooling Device Based on a 2D van der Waals Heterojunction

P. Dalla Valle, M. Bescond, F. Michelini, and N. Cavassilas.
Aix Marseille Université, CNRS, Université de Toulon, IM2NP UMR 7334, 13397, Marseille, France

Revealing the Thermal and Mechanical Properties of Amorphous Boron Nitride

Onurcan Kaya, Ivan Cole and Stephan Roche
Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, 08193 Barcelona, Spain

Phonon transport across Ge/GaAs heterojunctions by nonequilibrium molecular dynamics

T. Albrigi and R. Rurali
Institut de Ciència de Materials de Barcelona (ICMAB–CSIC) Campus UAB, 08193 Bellaterra, Spain

Electrothermal simulations of a thermal sensor integrated with a 4H-SiC JFET

F. Monaghan, A. Martinez and M. Jennings
Department of Electrical and Electronic Engineering, Swansea University, UK Swansea, UK

Effects of structural arrangements on thermoelectric properties of SiX (X=N,P,As,Sb,Bi) monolayers

Subhradip Ghosh, and Himanshu Murari
Department of Physics, Indian Institute of Technology Guwahati, Guwahati-781039, India

Analysis of Wave speed in magneto-thermoelastic nonlocal micropolar orthotropic medium

Anand Kumar Yadav(1) and Sangeeta Kumari (2)
(1) Shishu Niketan Model Senior Secondary School, Sector 22-D, Chandigarh, India (2) Department of mathematics, Chandigarh University, Gharuan, Punjab, India

Spin-selective transport phenomena in helical molecular wires

R. Korytá(1), Š. Marek(1), J. van Ruitenbeekz(2) and F. Eversy(3)
(1) Charles University, Czech Republic, (2) Institute of Theoretical Physics, University of Regensburg, Germany (3) Huygens-Kamerlingh Onnes Laboratory, Leiden University, Netherlands

Efficient Method to Obtain Target Bias Solutions of 6F2 DRAM Cells with Geometric Fluctuations

Geonho Park, Seung-Cheol Han, and Sung-Min Hong
School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology

First-principles Study on As Antisites in InGaAs Alloys, GaAs and InAs

Yucheol Cho, Gyeongdo Ham and Daeshik Kim∗
School of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon, 34141, South Korea

First-Principles investigation of polytypic defects in InP

Christian Dam Vedel(1,2) , Søren Smidstrup(2), Vihar P. Georgiev(1)
(1)Device Modelling Group, School of Engineering, University of Glasgow, United Kingdom (2) Synopsys Denmark ApS, Copenhagen, Denmark

Towards a semi-classical simulator for the energy distribution functions in optically excited hot carrier semiconductor devices

J. R. Barker(1) and A. M. Martinez(2)
(1) James Watt School of Engineering, University of Glasgow, Glasgow G12 8LT, UK (2) Department of Electrical and Electronic Engineering, Swansea University, Bay Campus , UK

Breakdown of GaN-based Planar Gunn Diodes investigated through a Combined Deep Learning-Monte Carlo Model

S. García-Sánchez, R. Rengel, S. Pérez, T. González and J. Mateos
Applied Physics Department and NANOLAB, Universidad de Salamanca, Salamanca 37008, Spain

Resistance calculation in metal-2D contacts: Accuracy of numerical integration

Peter Reyntjens (1,2,3), Pranay Baikadi (2), Raseong Kim (4), Maarten Van de Put (3), Bart Sorée (1,3,5) and William G. Vandenberghe (2)
(1) Department of Electrical Engineering, KULeuven (2) Department of Materials Science, UT Dallas (3) Imec (4) Components Research, Intel Corporation, Hillsboro, OR 97124 USA (5) Department of Physics, Universiteit Antwerpen

Multiscale simulations of ink-jet printed devices

D. Marian(1), P. K. Dubey(1), M. Perucchini(1), E. G. Marin(2), and G. Fiori(1)
(1)Dipartimento di Ingegneria dell’Informazione, Università di Pisa, Via G. Caruso 16, Pisa, 16122, Italy (2)Departmento de Electr´onica, Universidad de Granada, Avenida Fuente Nueva s/n, Granada, 18071, Spain

An extended Hueckel theory parameterization of Germanium for doped SiGe alloys

D. Dick(1,3), F. Fuchs(2,3), S. Gemming(3,4) and J. Schuster(1,2,3)
(1) Center for Microtechnologies, Chemnitz University of Technology, Chemnitz, Germany (2)Fraunhofer Insitute for Electronic Nano Systems (ENAS), Chemnitz, Germany (3) Center for Materials, Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, Chemnitz, Germany (4) Institute of Physics, Chemnitz University of Technology, Chemnitz, Germany

Time-Domain Computation of the Linewidth Enhancement Factor in Multi-Quantum-Well Semiconductor Optical Amplifiers

Ö.E. Aşırım, C. Jirauschek
TUM School of Computation, Information and Technology, Technical University of Munich, Hans-Piloty Straße 1, 85748 Garching, Germany

Multiscale simulation of high harmonic generation using artificial intelligence

Javier Serrano, José Miguel Pablos-Marín and Carlos Hernández-García
Grupo de Investigación en Aplicaciones del Láser y Fotónica, Departamento de Física Aplicada Universidad de Salamanca, Pl. Merced s/n, E-37008 Salamanca, Spain

FiPo FDTD Algorithm: Modeling Electric and Magnetic Fields with Potentials A and ϕ for Quantum Transport Solvers

L. Avazpour, M.L. King, S.W. Belling, and I. Knezevic
Department of Electrical and Computer Engineering University of Wisconsin-Madison, Madison, WI 53706, USA

DECaNT Numerical Tool for Exciton Dynamics in Carbon Nanotube Films

S. S. Sanders, S. W. Belling and I. Knezevic
Department of Electrical and Computer Engineering, University of Wisconsin – Madison Madison, WI 53706, USA

Noise impact on memristor performance: improvement of neuromorphic binary STDP

E. Salvador(1), R. Rodriguez(1), E. Miranda(1), J. Martin-Martinez(1), A. Rubio(2), V. Ntinas(2), G. Ch. Sirakoulis(3), A. Crespo-Yepes(1), M. Nafria(1)
(1)Electronic Engineering Department, Universitat Autònoma de Barcelona, 08193 Bellaterra, Spain (2)Electronic Engineering Department, Universitat Politècnica de Catalunya, 08034, Barcelona, Spain (3)Dept. of Electrical & Computer Engineering, Democritus University of Thrace, 67100, Xanthi, Greece

Control of the local magnetic states in graphene with voltage and gating

Fei Gao(1,2), Yu Zhang(3), Lin He(3), Shiwu Gao(4) and Mads Brandbyge(1)
(1) Department of Physics, Technical University of Denmark, DK-2800 Kongens Lyngby, Denmark (2) Donostia International Physics Center (DIPC), 20018 Donostia-San Sebastián, Spain (3) Center for Advanced Quantum Studies, Department of Physics, Beijing Normal University, 100875 Beijing, China (4) Beijing Computational Science Research Center, 100193 Beijing, China

Efficient Monte Carlo Electron Transport Formalism for Highly Nanostructured Materials

Pankaj Priyadarshi and Neophytos Neophytou
School of Engineerng, University of Warwick, Coventry, CV4 7AL, United Kingdom

General Maxwell-Bloch modelling of self-induced transparency in N-level atom

A. Demic(1), T.B Gill(1), M.A. Talukder(2), D. Indjin(1), P. Dean(1)
(1) School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, UK (2) Electrical and Electronic Engineering, Bangladesh University of Engineering and Technology, Dhaka-1205, Bangladesh

Thermal and electrical properties of nanocrystalline superionic NaxCu1.75S (x=0.1, 0.15, 0.2, 0.25) compounds

M.M. Kubenova, K.A. Kuterbekov, M.Kh. Balapanov, A.M. Kabyshev, K.Zh. Bekmyrza, Zh.A. Mukhan and A.K. Kulanov
L.N. Gumilyov Eurasian National University, 010008 Astana, Kazakhstan

Electronic and Magnetic Properties of Eu doped GaN nanowires: An Ab-initio study for spin-optoelectronic applications

V. K. Gudelli and I. S. Roqan
Physical Sciences and Engineering Division, King Abdullah University of Science and Technology, Thuwal-23955-6900, Saudi Arabia

From radiofrequency to infrared antennas: downscaling a rectangular loop geometry

Daniyal Khosh Maram, Joan Garcia, Raul Ruiz, Xavier Cartoixa, Gabriel Abadal
Dept. Enginyeria Electronica, Campus UAB, 08193-Bellaterra, Spain